Toshiba Semiconductor and Storage TK6A65W,S5X

mpnTK6A65W,S5X
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TK6A65
Category	Discrete Semiconductor .
Current - Continuous Dr.	5.8A (Ta)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	11 nC @ 10 V
Input Capacitance (Ciss.	390 pF @ 300 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Through Hole
Operating Temperature	150?C (TJ)
Package	Tube
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	30W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	1Ohm @ 2.9A, 10V
Series	DTMOSIV
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	3.5V @ 180?A

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