Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.30A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .220 nC @ 10 V
Input Capacitance (Ciss.5870 pF @ 25 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-274AA
Part StatusObsolete
Power Dissipation (Max)450W (Tc)
Rds On (Max) @ Id, Vgs190mOhm @ 18A, 10V
Series-
Supplier Device PackageSUPER-247? (TO-274AA)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
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