Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.39 nC @ 10 V
Drive Voltage (Max Rds .3Ohm @ 2A, 10V
FET Feature150W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .1050 pF @ 25 V
MfrIXYS
Mounting TypeTO-268
Operating TemperatureSurface Mount
PackageObsolete
Package / Case1000 V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 150?C (TJ)
Rds On (Max) @ Id, Vgs5V @ 1.5mA
SeriesTube
Supplier Device PackageTO-268-3, D?Pak (2 Lead.
Technology4A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?20V
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