IXYS IXTK180N15P

B0731PLGPZ

IXYS IXTK180N15P Single N-Channel 100 V 10 mOhm 800 W Power MOSFET - TO-264AA - 25 item(s)

IXYS IXTK180N15P Single N-Channel 100 V 10 mOhm 800 W Power MOSFET - TO-264AA - 25 item(s)zoom

Attributes

Key Value
Base Product NumberIXTK180
CaseTO264
CategoryDiscrete Semiconductor .
Current - Continuous Dr.180A (Tc)
Drain current180A
Drain to Source Voltage.150 V
Drain-source voltage150V
Drive Voltage (Max Rds .10V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate charge240nC
Gate Charge (Qg) (Max) .240 nC @ 10 V
Gate-source voltage?20V
Input Capacitance (Ciss.7000 pF @ 25 V
Kind of channelenhanced
Kind of packagetube
ManufacturerIXYS
MfrIXYS
MountingTHT
Mounting TypeThrough Hole
On-state resistance11m?
Operating Temperature-55?C ~ 175?C (TJ)
Packagetube
Package / CaseTO-264-3, TO-264AA
Part StatusActive
Polarisationunipolar
Power dissipation800W
Power Dissipation (Max)800W (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 90A, 10V
Reverse recovery time150ns
SeriesPolar
Supplier Device PackageTO-264 (IXTK)
TechnologyMOSFET (Metal Oxide), P.
Type of transistorN-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id5V @ 500?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomTMEIXTK180N15P11.451300IXYS11.45 @ 25
Future Electronics738536213.0447525IXYS13.044 @ 75
Digi-Key165249913.455100025IXYS13.455 @ 25
thumbzoomRadwellIXTK180N15P22.0125IXYS22.0 @ 25
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