Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Drain (Idss) .3 mA @ 10 V
Current Drain (Id) - Max30 mA
Drain to Source Voltage.20 V
FET TypeN-Channel
Input Capacitance (Ciss.5pF @ 10V
MfrNXP USA Inc.
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Power - Max250 mW
Product StatusObsolete
Series-
Supplier Device PackageTO-236AB
Voltage - Breakdown (V(.20 V
Voltage - Cutoff (VGS o.800 mV @ 10 ?A
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