Attributes

Key Value
Base Product NumberBBL4001
CategoryDiscrete Semiconductor .
Current - Continuous Dr.74A (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .135 nC @ 10 V
Input Capacitance (Ciss.6900 pF @ 20 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Part StatusObsolete
Power Dissipation (Max)2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs6.1mOhm @ 37A, 10V
Series-
Supplier Device PackageTO-220-3 Fullpack/TO-22.
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.6V @ 1mA
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