Attributes

Key Value
Categories Discrete Semiconductor.
Current - Continuous Dr. 44A (Tc)
Drain to Source Voltage. 100V
Drive Voltage (Max Rds . 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) . 108nC @ 20V
Input Capacitance (Ciss. 1700pF @ 25V
Lead Free Status / RoHS. Lead free / RoHS Compl.
Manufacturer ON Semiconductor
Manufacturer Part Number HUF75637S3ST
Moisture Sensitivity Le. 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55?C ~ 175?C (TJ)
Package / Case TO-263-3, D?Pak (2 Lea.
Packaging Reel
Power Dissipation (Max) 155W (Tc)
Rds On (Max) @ Id, Vgs 30 mOhm @ 44A, 10V
Series UltraFET?
Standard Package 800
Supplier Device Package D?PAK (TO-263AB)
Technology MOSFET (Metal Oxide)
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