Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss.680 pF @ 50 V
MfrRectron USA
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)80W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs540mOhm @ 4A, 10V
Series-
Supplier Device PackageTO-252-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id3.5V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759591225.4279