Toshiba Semiconductor and Storage TK8P65W,RQ

mpnTK8P65W,RQ
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	7.8A (Ta)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	16 nC @ 10 V
Input Capacitance (Ciss.	570 pF @ 300 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Power Dissipation (Max)	80W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	670mOhm @ 3.9A, 10V
Series	DTMOSIV
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	3.5V @ 300?A

As an Amazon Associate I earn from qualifying purchases.

1759595285.8280