Toshiba Semiconductor and Storage TPH1R712MD,L1Q

mpnTPH1R712MD,L1Q
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TPH1R712
Category	Discrete Semiconductor .
Current - Continuous Dr.	60A (Tc)
Drain to Source Voltage.	20 V
Drive Voltage (Max Rds .	2.5V, 4.5V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	182 nC @ 5 V
Input Capacitance (Ciss.	10900 pF @ 10 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerVDFN
Power Dissipation (Max)	78W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	1.7mOhm @ 30A, 4.5V
Series	U-MOSVI
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?12V
Vgs(th) (Max) @ Id	1.2V @ 1mA

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