Attributes

Key Value
Base Product NumberDMN6075
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2A (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .12.3 nC @ 10 V
Input Capacitance (Ciss.606 pF @ 20 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-236-3, SC-59, SOT-23.
Power Dissipation (Max)800mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs85mOhm @ 3.2A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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