Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.115 nC @ 10 V
Drive Voltage (Max Rds .190mOhm @ 14A, 10V
FET Feature415W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .4525 pF @ 25 V
MfrMicrochip Technology
Mounting TypeD3Pak
Operating TemperatureSurface Mount
PackageActive
Package / Case500 V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 150?C (TJ)
Rds On (Max) @ Id, Vgs5V @ 1mA
SeriesTube
Supplier Device PackageTO-268-3, D?Pak (2 Lead.
Technology30A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?30V
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