Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.215 nC @ 10 V
Drive Voltage (Max Rds .150mOhm @ 21A, 10V
FET Feature355W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .8590 pF @ 25 V
MfrMicrochip Technology
Mounting TypeISOTOP?
Operating TemperatureChassis Mount
PackageActive
Package / Case600 V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 150?C (TJ)
Rds On (Max) @ Id, Vgs5V @ 2.5mA
SeriesTube
Supplier Device PackageSOT-227-4, miniBLOC
Technology31A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?30V
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