FQA55N25

B011NJPVSW

FAIRCHILD SEMICONDUCTOR FQA55N25 MOSFET, N, TO-3P (50 pieces)

FAIRCHILD SEMICONDUCTOR FQA55N25 MOSFET, N, TO-3P (50 pieces)zoom

Attributes

Key Value
CaseTO3PN
Current - Continuous Dr.55A (Tc)
Drain current34.8A
Drain to Source Voltage.250 V
Drain-source voltage250V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate charge180nC
Gate Charge (Qg) (Max) .180 nC @ 10 V
Gate-source voltage?30V
Input Capacitance (Ciss.6250 pF @ 25 V
Kind of channelenhanced
Kind of packagetube
ManufacturerONSEMI
MfrON Semiconductor
MountingTHT
Mounting TypeThrough Hole
On-state resistance40m?
Operating Temperature-55?C ~ 150?C (TJ)
Package / CaseTO-3P-3, SC-65-3
Part StatusActive
Polarisationunipolar
Power dissipation310W
Power Dissipation (Max)310W (Tc)
Pulsed drain current220A
Rds On (Max) @ Id, Vgs40mOhm @ 27.5A, 10V
Supplier Device PackageTO-3PN
TechnologyMOSFET (Metal Oxide)
Type of transistorN-MOSFET
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18169415.31322Fairchild Semiconductor5.3 @ 2
thumbzoomDigi-KeyFQA55N25-ND5.6812ON Semiconductor5.68 @ 2
thumbzoomTMEFQA55N257.6312ONSEMI7.63 @ 2
RS Delivers671-4948P8.6761330onsemi8.676 @ 2
thumbzoomRadwellFQA55N259.012FAIRCHILD SEMICONDUCTOR1.09.0 @ 2
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