Attributes

Key Value
Base Product NumberSTFI13N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Tc)
Drain to Source Voltage.800 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .29 nC @ 10 V
Input Capacitance (Ciss.870 pF @ 100 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-262-3 Full Pack, I?P.
Power Dissipation (Max)35W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs450mOhm @ 6A, 10V
SeriesMDmesh? K5
Supplier Device PackageI2PAKFP (TO-281)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 100?A
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