Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12mA, 3mA
Drain to Source Voltage.10.6V
FET FeatureDepletion Mode
FET Type2 N-Channel (Dual) Matc.
Gate Charge (Qg) (Max) .-
Input Capacitance (Ciss.2.5pF @ 5V
MfrAdvanced Linear Devices.
Mounting TypeThrough Hole
Operating Temperature0?C ~ 70?C (TJ)
PackageTube
Package / Case8-DIP (0.300"", 7.62mm)
Part StatusActive
Power - Max500mW
Rds On (Max) @ Id, Vgs500Ohm @ 2.7V
SeriesEPAD?
Supplier Device Package8-PDIP
Vgs(th) (Max) @ Id1.26V @ 1?A
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