Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.7A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .9.2 nC @ 10 V
Input Capacitance (Ciss.434 pF @ 100 V
MfrAlpha & Omega Semicondu.
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-262-3 Long Leads, I?.
Power Dissipation (Max)104W (Tc)
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs650mOhm @ 3.5A, 10V
SeriesaMOS?
Supplier Device PackageTO-262
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
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