Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11.6A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .2.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .9.1 nC @ 4.5 V
Input Capacitance (Ciss.857 pF @ 10 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)2.14W (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs21mOhm @ 20A, 10V
Series-
Supplier Device PackageTO-252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id2V @ 250?A
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