Attributes

Key Value
Base Product NumberIPD60R
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2.3A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .6.7 nC @ 10 V
Input Capacitance (Ciss.140 pF @ 100 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)22W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs2.1Ohm @ 760mA, 10V
SeriesCoolMOS? CE
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 60?A
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