Infineon Technologies IRFH5110TRPBF

mpnIRFH5110TRPBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IRFH5110
Category	Discrete Semiconductor .
Current - Continuous Dr.	11A (Ta), 63A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	72 nC @ 10 V
Input Capacitance (Ciss.	3152 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerVDFN
Power Dissipation (Max)	3.6W (Ta), 114W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	12.4mOhm @ 37A, 10V
Series	HEXFET?
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 100?A

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