Attributes

Key Value
@Ic (test) (A)150m
@VCE (V)10
CaseTO39
Collector Capacitance (.25 pF
Derate Above 25?C34m
Forward Current Transfe.50
Ic Max. (A)5.0
Icbo Max. @Vcb Max. (A)100n
ManufacturerTexas Instruments
Max. hFE200
Max. Operating Junction.200 ?C
Max. PD (W)1.0
Maximum Collector Curre.5 A
Maximum Collector Power.1 W
Maximum Collector-Base .120 V
Maximum Collector-Emitt.100 V
Maximum Emitter-Base Vo.5 V
Min hFE50
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-12
PolarityNPN
R(sat) (?)2.0
SKU83021
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.100M
Transition Frequency (f.100 MHz
TypeTransistor Silicon NPN
Vbr CBO120
Vbr CEO100
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