VISHAY SILICONIX SIA430DJ-T1-GE3 N CHANNEL MOSFET, 20V, 12A, SC-70 (1 piece)

mpnSIA430DJ-T1-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

VISHAY SILICONIX SIA430DJ-T1-GE3 N CHANNEL MOSFET, 20V, 12A, SC-70 (1 piece)

VISHAY SILICONIX SIA430DJ-T1-GE3 N CHANNEL MOSFET, 20V, 12A, SC-70 (1 piece)

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Size: 1 Piece
PackageQuantity: 1
Manufacturer: VISHAY SILICONIX
Label: VISHAY SILICONIX

Attributes

Key	Value
Base Product Number	SIA430
Category	Discrete Semiconductor .
Current - Continuous Dr.	12A (Tc)
Drain to Source Voltage.	20 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	18 nC @ 10 V
Input Capacitance (Ciss.	800 pF @ 10 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	PowerPAK? SC-70-6
Power Dissipation (Max)	3.5W (Ta), 19.2W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	13.5mOhm @ 7A, 10V
Series	TrenchFET?
Supplier Device Package	PowerPAK? SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3V @ 250?A

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	Hotenda	H1809145	0.406	1	9000		Vishay/Siliconix		0.406 @ 1

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