mpn
BSS87E6327T
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
260mA (Ta)
Drain to Source Voltage.
240V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
5.5nC @ 10V
Input Capacitance (Ciss.
97pF @ 25V
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-243AA
Part Status
Obsolete
Power Dissipation (Max)
1W (Ta)
Rds On (Max) @ Id, Vgs
6Ohm @ 260mA, 10V
Series
SIPMOS?
Supplier Device Package
PG-SOT89-4-2
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
1.8V @ 108?A