mpn
IMW65R107M1HXKSA1
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Base Product Number
IMW65R107
Category
Discrete Semiconductor .
Current - Continuous Dr.
20A (Tc)
Description
MOSFET 650V NCH SIC TRE.
Detailed Description
N-Channel 650 V 20A (Tc.
Digi-Key Part Number
448-IMW65R107M1HXKSA1-ND
Drain to Source Voltage.
650 V
Drive Voltage (Max Rds .
18V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
15 nC @ 18 V
Input Capacitance (Ciss.
496 pF @ 400 V
Manufacturer
Infineon Technologies
Manufacturer Product Nu.
IMW65R107M1HXKSA1
Manufacturer Standard L.
39 Weeks
Mfr
Infineon Technologies
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Tube
Package / Case
TO-247-3
Power Dissipation (Max)
75W (Tc)
Product Status
Active
Rds On (Max) @ Id, Vgs
142mOhm @ 8.9A, 18V
Series
CoolSiC?
Supplier Device Package
PG-TO247-3-41
Technology
SiCFET (Silicon Carbide)
Vgs (Max)
+23V, -5V
Vgs(th) (Max) @ Id
5.7V @ 3mA