Infineon IPB60R120P7ATMA1

B087QV1S9W

IPB60R120P7ATMA1, Trans MOSFET N-CH 600V 26A 3-Pin(2+Tab) D2PAK T/R (25 Items)

IPB60R120P7ATMA1, Trans MOSFET N-CH 600V 26A 3-Pin(2+Tab) D2PAK T/R (25 Items)zoom

Attributes

Key Value
Base Product NumberIPB60R120
CaseD2PAK
Categories Discrete Semiconductor.
Category Discrete Semiconductor.
Current - Continuous Dr. 26A (Tc)
Drain current16A
Drain to Source Voltage. 650V , 650 V
Drain-source voltage600V
Drive Voltage (Max Rds . 10V
Drive Voltage (Max Rds . 10V
FET Feature -
FET Type N-Channel
Gate charge36nC
Gate Charge (Qg) (Max) .36 nC @ 10 V, 36nC @ 1.
Gate-source voltage?20V
Input Capacitance (Ciss.1544 pF @ 400 V, 1544p.
Kind of channelenhanced
Kind of package Reel
Lead Free Status / RoHS. Contains lead / RoHS C.
Manufacturer Infineon Technologies
Manufacturer Part Number IPB60R120P7ATMA1
Mfr Infineon Technologies
Moisture Sensitivity Le. 1 (Unlimited)
MountingSMD
Mounting Type Surface Mount
On-state resistance0.12?
Operating Temperature -55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case TO-263-3, D?Pak (2 Lea.
Packaging Reel
Polarisationunipolar
Power dissipation95W
Power Dissipation (Max) 95W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs120mOhm @ 8.2A, 10V, 1.
Series CoolMOS? P7
Standard Package 1,000
Supplier Device PackagePG-TO263-3, D?PAK (TO-.
Technology MOSFET (Metal Oxide) ,.
Type of transistorN-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 410?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomTMEIPB60R120P71.93125INFINEON TECHNOLOGIES1.93 @ 25
thumbzoomNewark49AC79962.81550INFINEON2.8 @ 25
Digi-Key82596934.754125Infineon Technologies4.754 @ 25
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