Infineon Technologies SPP21N50C3HKSA1

mpnSPP21N50C3HKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	SPP21N
Category	Discrete Semiconductor .
Current - Continuous Dr.	21A (Tc)
Description	MOSFET N-CH 560V 21A TO.
Detailed Description	N-Channel 560 V 21A (Tc.
Digi-Key Part Number	SPP21N50C3HKSA1-ND
Drain to Source Voltage.	560 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	95 nC @ 10 V
Input Capacitance (Ciss.	2400 pF @ 25 V
Manufacturer	Infineon Technologies
Manufacturer Product Nu.	SPP21N50C3HKSA1
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	208W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	190mOhm @ 13.1A, 10V
Series	CoolMOS?
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.9V @ 1mA

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