Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.173A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .210 nC @ 10 V
Input Capacitance (Ciss.7020 pF @ 25 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)230W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs3.3mOhm @ 100A, 10V
SeriesHEXFET?, StrongIRFET?
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.7V @ 150?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759638955.9869