Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.20A (Tc)
Drain to Source Voltage.600V
FET FeatureSuper Junction
FET TypeN-Channel
Gate Charge (Qg) (Max) .27nC @ 10V
Input Capacitance (Ciss.1.6pF @ 25V
MfrRenesas Electronics Ame.
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Part StatusObsolete
Power Dissipation (Max)33.7W (Tc)
Rds On (Max) @ Id, Vgs178mOhm @ 10A, 10V
Series-
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id-
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