Toshiba Semiconductor and Storage SSM3J356R,LF

mpnSSM3J356R,LF
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	4V, 10V
Drain to Source Voltage.	8.3nC @ 10V
Drive Voltage (Max Rds .	300mOhm @ 1A, 10V
FET Feature	1W (Ta)
FET Type	MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .	330pF @ 10V
Mfr	Toshiba Semiconductor a.
Mounting Type	SOT-23F
Operating Temperature	Surface Mount
Package	Active
Package / Case	60V
Part Status	P-Channel
Power Dissipation (Max)	150?C (TJ)
Rds On (Max) @ Id, Vgs	2V @ 1mA
Series	Tape & Reel (TR)
Supplier Device Package	SOT-23-3 Flat Leads
Technology	2A (Ta)
Vgs (Max)	-
Vgs(th) (Max) @ Id	+10V, -20V

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