Attributes

Key Value
Base Product NumberSUD09
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8.8A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .34.8 nC @ 10 V
Input Capacitance (Ciss.1055 pF @ 50 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)2.5W (Ta), 32.1W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs195mOhm @ 3.6A, 10V
SeriesTrenchFET?
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759638621.4903