Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.36A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .87 nC @ 10 V
Input Capacitance (Ciss.4600 pF @ 10 V
MfrRenesas Electronics Ame.
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageBulk
Package / CaseTO-220-3 Isolated Tab
Power Dissipation (Max)2W (Ta), 32W (Tc)
Product StatusLast Time Buy
Rds On (Max) @ Id, Vgs20mOhm @ 18A, 10V
Series-
Supplier Device PackageTO-220 Isolated Tab
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id-
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