Toshiba Semiconductor and Storage TPH3R003PL,LQ

mpnTPH3R003PL,LQ
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TPH3R003
Category	Discrete Semiconductor .
Current - Continuous Dr.	88A (Tc)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	50 nC @ 10 V
Input Capacitance (Ciss.	3825 pF @ 15 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerVDFN
Power Dissipation (Max)	90W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	4.2mOhm @ 44A, 4.5V
Series	U-MOSIX-H
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.1V @ 300?A

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