Attributes

Key Value
@Ic (A)100M
@VCE (test) (V)1.0
C(ob) (F)12p
CaseTO92
Collector Capacitance (.18 pF
Derate (Amb) (W/?C)3.2m
EAN5052406860783
Forward Current Transfe.63
hfe630=
Ic Max. (A)800m
ManufacturerFairchild Semiconductor
Max. Operating Junction.150 ?C
Max. PD (W)600m
Maximum Collector Curre.0.8 A
Maximum Collector Power.0.5 W
Maximum Collector-Base .50 V
Maximum Collector-Emitt.45 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-17
PolarityPNP
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.100M
Transition Frequency (f.60 MHz
TypeTransistor Silicon PNP
Vbr CBO50
Vbr CEO45
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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