Attributes

Key Value
@Ic (test)10m
@VCE (test) (V)10
CaseTO116
Collector Capacitance (.8 pF
Forward Current Transfe.40
fT Min (Hz)200M
Ic Max.500m
ManufacturerMotorola Semiconductor
Max. Operating Junction.175 ?C
Maximum Collector Curre.0.8 A
Maximum Collector Power.0.5 W
Maximum Collector-Base .75 V
Maximum Collector-Emitt.40 V
Maximum Emitter-Base Vo.6 V
Min hFE35
PD Max. (W)2.4
Pinout Equivalence Numb.14-336
PolarityNPN
SKU1278817
Surface Mounted Yes/NoNO
Transition Frequency (f.300 MHz
TypeTransistor Silicon NPN
Vceo Max.30
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