Infineon Technologies BSZ100N06NSATMA1

mpnBSZ100N06NSATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

BSZ100N06NSATMA1, Trans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R (50 Items)

BSZ100N06NSATMA1, Trans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R (50 Items)

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Brand: Infineon Technologies
PartNumber: BSZ100N06NSATMA1
Model: BSZ100N06NSATMA1
Manufacturer: Infineon Technologies
Label: Infineon Technologies

Attributes

Key	Value
Base Product Number	BSZ100
Category	Discrete Semiconductor .
Current - Continuous Dr.	40A (Tc)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	15 nC @ 10 V
Input Capacitance (Ciss.	1075 pF @ 30 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerTDFN
Part Status	Active
Power Dissipation (Max)	2.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs	10mOhm @ 20A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TSDSON-8-FL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.3V @ 14?A

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	Future Electronics	4096790	0.4884	70000	10		Infineon		0.4884 @ 70000
	Newark	12AC9458	0.717	1	2188		INFINEON		0.717 @ 10
	Digi-Key	6559928	0.87	1	10	369	Infineon Technologies		0.87 @ 10

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