Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.51A (Tc)
Drain to Source Voltage.55V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .36nC @ 5V
Input Capacitance (Ciss.1620pF @ 25V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-262-3 Long Leads, I?.
Part StatusObsolete
Power Dissipation (Max)80W (Tc)
Rds On (Max) @ Id, Vgs13.5mOhm @ 31A, 10V
SeriesHEXFET?
Supplier Device PackageTO-262
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id3V @ 250?A
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