Attributes

Key Value
Base Product NumberIXTT1
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.5A (Tc)
Drain to Source Voltage.2500 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .41 nC @ 10 V
Input Capacitance (Ciss.1660 pF @ 25 V
MfrIXYS
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-268-3, D?Pak (2 Lead.
Power Dissipation (Max)250W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs40Ohm @ 750mA, 10V
Series-
Supplier Device PackageTO-268HV (IXTT)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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