Attributes

Key Value
Base Product NumberTN5325
CategoryDiscrete Semiconductor .
Current - Continuous Dr.150mA (Ta)
Drain to Source Voltage.250 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss.110 pF @ 25 V
MfrMicrochip Technology
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TA)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Power Dissipation (Max)360mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs7Ohm @ 1A, 10V
Series-
Supplier Device PackageTO-236AB (SOT23)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 1mA
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