Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.750mA
Drain to Source Voltage.100V
FET FeatureStandard
FET Type4 P-Channel
Gate Charge (Qg) (Max) .-
Input Capacitance (Ciss.-
MfrMicrosemi Corporation
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case14-DIP (0.300", 7.62mm)
Power - Max1.4W
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.4Ohm @ 500mA, 10V
SeriesMilitary, MIL-PRF-19500.
Supplier Device PackageMO-036AB
Vgs(th) (Max) @ Id4V @ 250?A
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