Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.52 nC @ 10 V
Drive Voltage (Max Rds .90mOhm @ 16.5A, 10V
FET Feature227W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .1600 pF @ 25 V
MfrON Semiconductor
Mounting TypeTO-3PN
Operating TemperatureThrough Hole
PackageActive
Package / Case150 V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 175?C (TJ)
Rds On (Max) @ Id, Vgs4V @ 250?A
SeriesTube
Supplier Device PackageTO-3P-3, SC-65-3
Technology33A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?25V
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