Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.22A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .55 nC @ 10 V
Input Capacitance (Ciss.2860 pF @ 380 V
MfrFairchild Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-247-3
Part StatusActive
Power Dissipation (Max)227W (Tc)
Rds On (Max) @ Id, Vgs170mOhm @ 11A, 10V
SeriesSuperFET? II
Supplier Device PackageTO-247
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 250?A
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