BSP297H6327XTSA1

B00M2DGF2K

MOSFET SIPMOS Sm-Signal 200V 1.8Ohms 660mA

MOSFET SIPMOS Sm-Signal 200V 1.8Ohms 660mAzoom

Attributes

Key Value
Base Product NumberBSP297
CaseSOT223
CategoryDiscrete Semiconductor .
Ciss Max. (F)630p
Current - Continuous Dr.660mA (Ta)
Derate (Amb) (W/?C)12m
Drain current0.66A
Drain to Source Voltage.200 V
Drain-source voltage200V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .16.1 nC @ 10 V
Gate-source voltage?20V
gfs Max.900m
gfs Min500m
I(d) for G(fs)600m
Id Max. (A)600m
Idss Max. (A)1.0u
Input Capacitance (Ciss.357 pF @ 25 V
Kind of channelenhanced
ManufacturerInfineon - Siemens, Inf.
Max. PD (W)1.5
MfrInfineon Technologies
MountingSMD
Mounting TypeSurface Mount
On-state resistance1.8?
Oper. Temp (?C) Max.150
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Pinout Equivalence Numb.4-81
Polarisationunipolar
Power dissipation1.8W
Power Dissipation (Max)1.8W (Ta)
Product StatusActive
R(ds) On (?)3.3
Rds On (Max) @ Id, Vgs1.8Ohm @ 660mA, 10V
SeriesSIPMOS?
SKU138378
Supplier Device PackagePG-SOT223-4
Surface Mounted Yes/NoYES
t(f) Max. (S)60n
TechnologySIPMOS?, MOSFET (Metal .
Tr Max. (s)15n
TypeTransistor
Type of transistorN-MOSFET
Vbr DSS200
Vbr GSS20
Vgs (Max)?20V
Vgs(th) (Max) @ Id1.8V @ 400?A
Vp Max.2.0

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH43038370.24961100Infineon Technologies0.2496 @ 100
Future Electronics70601850.3241000100Infineon0.324 @ 1000
thumbzoomTMEBSP297H6327XTSA10.5153228INFINEON TECHNOLOGIES0.515 @ 100
thumbzoomNewark68AC44160.6321100INFINEON0.632 @ 100
Digi-Key54100470.8140851100Infineon Technologies0.814085 @ 100
RS Delivers826-9272P1.1161100Infineon1.116 @ 100
Little DiodeBSP2977.11751951100Infineon - Siemens7.1175195 @ 100
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