Attributes

Key Value
Base Product NumberIPW60R017
CategoryDiscrete Semiconductor .
Current - Continuous Dr.109A (Tc)
DescriptionHIGH POWER_NEW
Detailed DescriptionN-Channel 600 V 109A (T.
Digi-Key Part Number448-IPW60R017C7XKSA1-ND
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .240 nC @ 10 V
Input Capacitance (Ciss.9890 pF @ 400 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPW60R017C7XKSA1
Manufacturer Standard L.39 Weeks
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)446W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs17mOhm @ 58.2A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO247-3-41
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 2.91mA
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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