Attributes

Key Value
Base Product NumberIPW60R099
CategoryDiscrete Semiconductor .
Current - Continuous Dr.31A (Tc)
DescriptionMOSFET N-CH 650V 31A TO.
Detailed DescriptionN-Channel 650 V 31A (Tc.
Digi-Key Part Number448-IPW60R099CPFKSA1-ND
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .80 nC @ 10 V
Input Capacitance (Ciss.2800 pF @ 100 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPW60R099CPFKSA1
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)255W (Tc)
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs99mOhm @ 18A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 1.2mA
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