Generic IRF3315PBF

B09D3XQJQ5

IRF3315PBF - Transistor 3 TO-220 3315 (10 Piece Lot)

IRF3315PBF - Transistor 3 TO-220 3315 (10 Piece Lot)zoom

Attributes

Key Value
CategoryDiscrete Semiconductor .
Channel TypeN
ConfigurationSingle
Current - Continuous Dr.23A (Tc)
Dimensions10.67 x 4.83 x 16.51 mm
Drain Current21 A
Drain to Source On Resi.0.07 Ohms
Drain to Source Voltage150 V
Drain to Source Voltage.150 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Forward Transconductance17 S
Forward Voltage, Diode1.3 V
Gate Charge (Qg) (Max) .95 nC @ 10 V
Gate to Source Voltage? 20 V
Height0.65" (16.51mm)
Input Capacitance1300 pF @ 25 V
Input Capacitance (Ciss.1300 pF @ 25 V
Length0.42 in
Maximum Operating Tempe.+175 ?C
MfrInfineon Technologies
Minimum Operating Tempe.-55 ?C
Mounting TypeThrough Hole
Number of Elements per .1
Number of Pins3
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Package TypeTO-220AB
Part StatusObsolete
PolarizationN-Channel
Power Dissipation94 W
Power Dissipation (Max)94W (Tc)
Product HeaderHexfet? Power MOSFET
Rds On (Max) @ Id, Vgs70mOhm @ 12A, 10V
Resistance, Thermal, Ju.1.6 ?C/W
SeriesHEXFET?, HEXFET Series
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Temperature Operating R.-55 to +175 ?C
Total Gate Charge95 nC
Turn Off Delay Time49 ns
Turn On Delay Time9.6 ns
Typical Gate Charge @ V.95 nC @ 10 V
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
Voltage, Breakdown, Dra.150 V
Width0 in

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics49176620.984125Infineon0.984 @ 25
RS Delivers542-92261.812143Infineon1.812 @ 25
us.rs-online.com700169521.911919Infineon1.91 @ 25
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev


As an Amazon Associate I earn from qualifying purchases.

1759664577.7925