Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.31 nC @ 10 V
Drive Voltage (Max Rds .4.7Ohm @ 1.75A, 10V
FET Feature135W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .715 pF @ 25 V
MfrMicrochip Technology
Mounting TypeTO-247 [B]
Operating TemperatureThrough Hole
PackageNot For New Designs
Package / Case1200 V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 150?C (TJ)
Rds On (Max) @ Id, Vgs5V @ 1mA
SeriesTube
Supplier Device PackageTO-247-3
Technology3.5A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?30V
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