Attributes

Key Value
Base Product NumberSTH410
CategoryDiscrete Semiconductor .
Current - Continuous Dr.200A (Tc)
Drain to Source Voltage.40V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .141nC @ 10V
Input Capacitance (Ciss.11500pF @ 25V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-7, D?Pak (6 Lead.
Part StatusActive
Power Dissipation (Max)365W (Tc)
Rds On (Max) @ Id, Vgs1.1mOhm @ 90A, 10V
SeriesAutomotive, AEC-Q101, S.
Supplier Device PackageH2PAK-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 250?A
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