Toshiba Semiconductor and Storage TK14N65W,S1F

mpnTK14N65W,S1F
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TK14N65
Category	Discrete Semiconductor .
Current - Continuous Dr.	13.7A (Ta)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	35 nC @ 10 V
Input Capacitance (Ciss.	1300 pF @ 300 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Through Hole
Operating Temperature	150?C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	130W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	250mOhm @ 6.9A, 10V
Series	DTMOSIV
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	3.5V @ 690?A

As an Amazon Associate I earn from qualifying purchases.

1759669092.5288