Attributes

Key Value
Base Product NumberTK39A60
CategoryDiscrete Semiconductor .
Current - Continuous Dr.38.8A (Ta)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .110 nC @ 10 V
Input Capacitance (Ciss.4100 pF @ 300 V
MfrToshiba Semiconductor a.
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Part StatusActive
Power Dissipation (Max)50W (Tc)
Rds On (Max) @ Id, Vgs65mOhm @ 19.4A, 10V
SeriesDTMOSIV
Supplier Device PackageTO-220SIS
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id3.7V @ 1.9mA
prev


As an Amazon Associate I earn from qualifying purchases.

1759660172.8832