mpn
TK39A60W,S4VX
brand
name: Toshiba Semiconductor and Storage
manufacturer
name: Toshiba Semiconductor and Storage
Attributes
Key
Value
Base Product Number
TK39A60
Category
Discrete Semiconductor .
Current - Continuous Dr.
38.8A (Ta)
Drain to Source Voltage.
600 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
110 nC @ 10 V
Input Capacitance (Ciss.
4100 pF @ 300 V
Mfr
Toshiba Semiconductor a.
Mounting Type
Through Hole
Operating Temperature
150?C (TJ)
Package
Tube
Package / Case
TO-220-3 Full Pack
Part Status
Active
Power Dissipation (Max)
50W (Tc)
Rds On (Max) @ Id, Vgs
65mOhm @ 19.4A, 10V
Series
DTMOSIV
Supplier Device Package
TO-220SIS
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?30V
Vgs(th) (Max) @ Id
3.7V @ 1.9mA