Toshiba Semiconductor and Storage TPH9R506PL,LQ

mpnTPH9R506PL,LQ
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TPH9R506
Category	Discrete Semiconductor .
Current - Continuous Dr.	34A (Tc)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	21 nC @ 10 V
Input Capacitance (Ciss.	1910 pF @ 30 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	175?C
Package	Tape & Reel (TR)
Package / Case	8-PowerVDFN
Power Dissipation (Max)	830mW (Ta), 81W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	9.5mOhm @ 17A, 10V
Series	U-MOSIX-H
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 200?A

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